Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Writeor Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB isavailable in a 69-pin BGA package, making it suitable for a variety of design applications.
TH50VSF3681AASB Maximum Ratings
SYMBOL
PARAMETER
RANGE
UNIT
VCC
VCCs/VCCf Supply Voltage
−0.3~4.2
V
VIN
Input Voltage(1)
−0.3~4.2
V
VDQ
Input/Output Voltage
−0.5~VCC + 0.5 ( 4.2)
V
Topr
Operating Temperature
−20~85
°C
PD
Power Dissipation
0.6
W
Tsolder
Soldering Temperature (10 s)
260
°C
IOSHORT
Output Short Circuit Current(2)
100
mA
NEW
Erase/Program Cycling Capability
100,000
Cycle
Tstg
Storage Temperature
−55~125
°C
TH50VSF3681AASB Features
• Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V • Data retention supply voltageVCCs = 1.5 V~3.3 V • Current consumptionOperating: 45 mA maximum (CMOS level)Standby: 10 A maximum (SRAM CMOS level)Standby: 10 A maximum (FLASH) • Block erase architecture for flash memory8 * 8 Kbytes63 * 64 Kbytes