TIL127, TIL128, TIL128A Selling Leads, Datasheet
MFG:MOTO Package Cooled:DIP-6 D/C:00+
TIL127, TIL128, TIL128A Datasheet download
Part Number: TIL127
MFG: MOTO
Package Cooled: DIP-6
D/C: 00+
TIL127, TIL128, TIL128A
- Table of contents:
Info of TIL127
Info of TIL128
Info of TIL128A
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About TIL127
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Datasheet: TIL127
File Size: 235117 KB
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About TIL128A
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Datasheet: TIL128A
File Size: 235117 KB
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About TIL128A
PDF/DataSheet Download
Datasheet: TIL128A
File Size: 235117 KB
Manufacturer:
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TIL127 General Description
The TIL127 is a type of optocoupler. The package includes a gaulium arsenide infrared emittering diode and an npn silicon phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compoun d. The case will withstand soldering temperature with no deformation, and device performance characteristics remai ns stable while operated in high humidity conditions. Unit weight is approximately 0.52 grams.
features of TIL127 are: (1)gallium arsenide diode infrared source optically coupled to a silicon NPN darlington connec ted phototransistor; (2)high direct current transfer ratio: 300% minimum at 10mA; (3)high voltage electrical isolatio n: 5000volt rating; (4)plastic dual in line package; (5)typical applications include remote terminal isolation, SCR and triao triggers, mechanical relays, and pulse transformers.
The absolute maximum ratings and electrical characteristics of the TIL127 can be summarized as: (1)input-to-output voltage:±15kV; (2)collector base voltage: 30V; (3)collector emitter voltage: 30V; (4)emitter collector voltage: 7V, em itter base voltage: 7V; (5)input diode reverse voltage: 3V; (6)input diode continuous forward current: 100mA; (7)infr ared emitter diode: 150mW; (8)lead temperature 1.6mm from case for 10 seconds: 260; (9): storage temperature range:-55 to 150. Electrical characteristics: (1)collector-base breakdown voltage(IC=10uA, IE=0, IF=0): 30V min; (2)collector-emitter breakdown voltage(IC=1mA, IE=0, IF=0): 30V min; (3)emitter base breakdown voltage(IE=10uA, IC=0, IF=0): 7V min; (4)transistor static foeward current transfer ratio(VCE=1V, IC=10mA, IF=0): 15000, etc.
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