TN2406L, TN2410, TN2425TG Selling Leads, Datasheet
MFG:Siliconix Package Cooled:TO-92 D/C:07+
TN2406L, TN2410, TN2425TG Datasheet download

Part Number: TN2406L
MFG: Siliconix
Package Cooled: TO-92
D/C: 07+
MFG:Siliconix Package Cooled:TO-92 D/C:07+
TN2406L, TN2410, TN2425TG Datasheet download

MFG: Siliconix
Package Cooled: TO-92
D/C: 07+
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PDF/DataSheet Download
Datasheet: TN2010L
File Size: 93908 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TN2410L
File Size: 56109 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TN2010L
File Size: 93908 KB
Manufacturer:
Download : Click here to Download
The Supertex TN2425TG is a dual low threshold enhancement mode (normally off) transistor utilizing a vertical DMOS structure and Supertex's well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, with the high input impedance and positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
| Parameter | Value |
| Drain to source voltage | BVDSS |
| Drain to gate voltage | BVDGS |
| Gate to source voltage | ±20V |
| Thermal resistance, Junction to drain lead |
50/W |
| Operating and storage temperature | -55 to +150 |
| Soldering temperature1 | +300 |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.

