TN2010L

The TN2010L is designed as one kind of N-channel enhancement-mode MOS transistor which produced by the Siliconix Incorporated.The absolute maximum ratings of this part can be summarized as:(1)drain-source voltage:200 V;(2)gate-source voltage:+/-20 V;(3)continuous drain current(Ta=25):+/-0.18 A;(4)continuous drain current(Ta=100):+/-0.11 A;(5)pulsed drain current:+/-1 A;(6)maximum power dissipation(Ta=25):0.8 W;(7)maximum power dissipation(Ta=100):0.32 W;(8)operating junction & storage temperature range:-55 to 150;(9)lead temperature:300.

The specifications of the TN2010L can be summarized as:(1)drain-source breakdown voltage:240 V;(2)gate threshold voltage:1.4 V;(3)gate-body leakage:+/-1 nA;(4)zero gate voltage drain current:0.01 uA;(5)zero gate voltage drain current(Tj=125):1.0 uA;(6)on-state drain current:0.8 A;(7)forward transconductance:500 mS:(8)turn-on time:15 to 35 ns;(9)turn-off time:30 to 60 ns.If you want to know more information about it,please download the datasheet in www.seekic.com and www.chinaicmart.com .