TPC6108, TPC6201, TPC6601 Selling Leads, Datasheet
MFG:TOS Package Cooled:SOT23 D/C:06+
TPC6108, TPC6201, TPC6601 Datasheet download
Part Number: TPC6108
MFG: TOS
Package Cooled: SOT23
D/C: 06+
TPC6108, TPC6201, TPC6601
- Table of contents:
Info of TPC6108
Info of TPC6201
Info of TPC6601
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About TPC6108
PDF/DataSheet Download
Datasheet: TPC6108
File Size: 64199 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPC6201
PDF/DataSheet Download
Datasheet: TPC6201
File Size: 170404 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPC6108 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
Drain-source voltage |
VDSS |
−30 |
V | |
|
Drain-gate voltage (RGS = 20 kΩ) |
VDGR |
−30 |
V | |
|
Gate-source voltage |
VGSS |
±20 |
V | |
|
Drain current |
DC (Note 1) |
ID |
−4.5 |
A |
|
Pulse (Note 1) |
IDP |
−18 | ||
|
Drain power dissipation(t = 5 s) (Note 2a) |
PD |
2.2 |
W | |
|
Drain power dissipation(t = 5 s) (Note 2b) |
PD |
0.7 | ||
|
Single pulse avalanche energy (Note 4) |
EAS |
1.3 |
mJ | |
|
Avalanche current |
IAR |
−2.25 |
A | |
|
Repetitive avalanche energy |
EAR |
0.22 |
mJ | |
|
Channel temperature |
Tch |
150 |
°C | |
|
Storage temperature range |
Tstg |
−55~150 |
°C | |
TPC6108 Features
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
TPC6108 Connection Diagram
TPC6201 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
Drain-source voltage |
VDSS |
30 |
V | |
|
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
|
Gate-source voltage |
VGSS |
±20 |
V | |
|
Drain current |
DC (Note 1) |
ID |
2.5 |
A |
|
Pulse (Note 1) |
IDP |
10 | ||
|
Drain power |
Single-device operation |
PD (1) |
0.9 |
W |
|
Single-device value at |
PD (2) |
0.76 |
W | |
|
Drain power |
Single-device operation |
PD (1) |
0.4 |
W |
|
Single-device value at |
PD (2) |
0.31 | ||
|
Single pulse avalanche energy (Note 4) |
EAS |
1.0 |
mJ | |
|
Avalanche current |
IAR |
1.25 |
A | |
|
Repetitive avalanche energy |
EAR |
0.16 |
mJ | |
|
Channel temperature |
Tch |
150 |
°C | |
|
Storage temperature range |
Tstg |
−55~150 |
°C | |
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution.
TPC6201 Features
`Low drain-source ON resistance: R DS (ON) = 80 m (typ.)
`High forward transfer admittance: |Yfs| = 3.8 S (typ.)
`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
`Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
`High forward transfer admittance: |Yfs| = 3.8 S (typ.)
`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
`Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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