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TPC8205, TPC8206, TPC8207

Table of contents:
Info of TPC8205
Info of TPC8206
Info of TPC8207

TPC8205, TPC8206, TPC8207 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:MSOP8 D/C:08+

TPC8205, TPC8206, TPC8207 Datasheet download

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Part Number: TPC8205

MFG: TOSHIBA

Package Cooled: MSOP8

D/C: 08+

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TPC8206 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	60	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	60	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	5	A
Drain current	Pulse (Note 1)	I_DP	20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.0	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	92	mJ
Avalanche current		I_AR	5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8206 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)}= 40 m (typ.)
`High forward transfer admittance: |Yfs| = 7.0 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (_VDS= 60 V)
`Enhancement-mode: V_th= 1.3 to 2.5 V (V_DS = 10 V, I_D= 1 mA)

TPC8207 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	6	A
Drain current	Pulse (Note 1)	I_DP	24	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	11	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	46.8	mJ
Avalanche current		I_AR	6	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8207 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 16 m (typ.)
`High forward transfer admittance: |Yfs| =11 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 20 V)
`Enhancement-mode: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 200 A)

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