TPIC5223LD, TPIC5401, TPIC5404NE Selling Leads, Datasheet
MFG:ti Package Cooled:ti D/C:dc99
TPIC5223LD, TPIC5401, TPIC5404NE Datasheet download
Part Number: TPIC5223LD
MFG: ti
Package Cooled: ti
D/C: dc99
TPIC5223LD, TPIC5401, TPIC5404NE
- Table of contents:
Info of TPIC5223LD
Info of TPIC5401
Info of TPIC5404NE
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About TPI
PDF/DataSheet Download
Datasheet: TPI
File Size: 287752 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
About TPIC5401
PDF/DataSheet Download
Datasheet: TPIC5401
File Size: 212948 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
About TPI
PDF/DataSheet Download
Datasheet: TPI
File Size: 287752 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
TPIC5401 General Description
The TPIC5401 is a monolithic gate-protected power DMOS array that consists of four N-channel enhancement-mode DMOS transistors, two of which are configured with a common source. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kW resistor.
The TPIC5401 is offered in a 16-pin thermally enhanced dual-in-line (NE) package and a 20-pin wide-body surface-mount (DW) package and is characterized for operation over the case temperature range of 40°C to 125°C.
TPIC5401 Maximum Ratings
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 V to 18 V
Continuous drain current, each output, TC = 25°C: DW package . . . . . . . . . . . . 1.7 A
NE package . . . . . . . . . . . . . . . 2 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . .2 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . 10 A
Continuous gate-to-source zener-diode current, TC = 25°C. . . . . . . . . . . . . . . .±50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . ±500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4, 15, and 16) . . . .21 mJ
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . .See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 125°C
Storage temperature range, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . .260°C
TPIC5401 Features
Low rDS(on) . . . 0.3 W Typ
High Voltage Output . . . 60 V
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 10 A Per Channel
Fast Commutation Speed
High Voltage Output . . . 60 V
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 10 A Per Channel
Fast Commutation Speed
TPIC5401 Connection Diagram
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