TPIC5403DW, TPIC5404, TPIC5423L Selling Leads, Datasheet
MFG:TI Package Cooled:SOP D/C:New
TPIC5403DW, TPIC5404, TPIC5423L Datasheet download
Part Number: TPIC5403DW
MFG: TI
Package Cooled: SOP
D/C: New
TPIC5403DW, TPIC5404, TPIC5423L
- Table of contents:
Info of TPIC5403DW
Info of TPIC5404
Info of TPIC5423L
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About TPI
PDF/DataSheet Download
Datasheet: TPI
File Size: 287752 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
About TPIC5404
PDF/DataSheet Download
Datasheet: TPIC5404
File Size: 203582 KB
Manufacturer:
Download : Click here to Download
About TPIC5423L
PDF/DataSheet Download
Datasheet: TPIC5423L
File Size: 214623 KB
Manufacturer:
Download : Click here to Download
TPIC5404 General Description
The TPIC5404 is a monolithic power DMOS array that consists of four electrically isolated N-channel enhancement-mode DMOS transistors, two of which are configured with a common source.
The TPIC5404 is offered in a 16-pin thermally enhanced dual-in-line (NE) package and a 20-pin wide-body surface-mount (DW) package. The TPIC5404 is characterized for operation over the case temperature range of 40°C to 125°C.
The TPIC5404 is offered in a 16-pin thermally enhanced dual-in-line (NE) package and a 20-pin wide-body surface-mount (DW) package. The TPIC5404 is characterized for operation over the case temperature range of 40°C to 125°C.
TPIC5404 Maximum Ratings
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±20
Continuous drain current, each output, TC = 25 : DW package . . . . . . . . . . .. . .1.7 A
NE package . . . . . . . . . . . .. . . .2 A
Continuous source-to-drain diode current (NE package) . . . . . . . . . . . . . . . . . . . .. . .2 A
Pulsed drain current, each output, TC = 25 (see Note 1 and Figure 15) . . . .. . . .10 A
Single-pulse avalanche energy, TC = 25 (see Figures 4 and 16). . . . . . .. . . . . . . 21 mJ
Continuous total power dissipation . . . . . . . . . . . . . . . . . . .See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . .40 to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 125
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . .260
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
Source-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage (Q1, Q3) . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . 100 V
Drain-to-GND voltage (Q2, Q4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±20
Continuous drain current, each output, TC = 25 : DW package . . . . . . . . . . .. . .1.7 A
NE package . . . . . . . . . . . .. . . .2 A
Continuous source-to-drain diode current (NE package) . . . . . . . . . . . . . . . . . . . .. . .2 A
Pulsed drain current, each output, TC = 25 (see Note 1 and Figure 15) . . . .. . . .10 A
Single-pulse avalanche energy, TC = 25 (see Figures 4 and 16). . . . . . .. . . . . . . 21 mJ
Continuous total power dissipation . . . . . . . . . . . . . . . . . . .See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . .40 to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 125
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . .260
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
TPIC5404 Connection Diagram
TPIC5423L General Description
The TPIC5423L is a monolithic gate-protected logic-level power DMOS array that consists of four electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the humanbody model of a 100-pF capacitor in series with a 1.5-kW resistor.
The TPIC5423L is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for
operation over the case temperature of 40°C to 125°C.
TPIC5423L Maximum Ratings
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .1.25 A
Continuous source-to-drain diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.25 A
Pulsed drain current, each output, Imax, TC = 25 (see Note 1 and Figure 15) . . . . . . . . . .4 A
Continuous gate-to-source zener-diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . .±50 mA
Pulsed gate-to-source zener-diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, TC = 25 (see Figures 4 and 16) . . . . . . . . . . . . . . . .96 mJ
Continuous total dissipation, TC = 25 (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . .. . . .1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . .40 to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 125
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . .260
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .1.25 A
Continuous source-to-drain diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.25 A
Pulsed drain current, each output, Imax, TC = 25 (see Note 1 and Figure 15) . . . . . . . . . .4 A
Continuous gate-to-source zener-diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . .±50 mA
Pulsed gate-to-source zener-diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, TC = 25 (see Figures 4 and 16) . . . . . . . . . . . . . . . .96 mJ
Continuous total dissipation, TC = 25 (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . .. . . .1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . .40 to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 125
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . .260
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
TPIC5423L Connection Diagram
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
