TSA-A-2, TSAL4400, TSAL5100 Selling Leads, Datasheet
MFG:HIMAKE Package Cooled:05+ D/C:05+
TSA-A-2, TSAL4400, TSAL5100 Datasheet download

Part Number: TSA-A-2
MFG: HIMAKE
Package Cooled: 05+
D/C: 05+
MFG:HIMAKE Package Cooled:05+ D/C:05+
TSA-A-2, TSAL4400, TSAL5100 Datasheet download

MFG: HIMAKE
Package Cooled: 05+
D/C: 05+
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PDF/DataSheet Download
Datasheet: TSA0801
File Size: 228280 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TSAL4400
File Size: 83779 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TSAL5100
File Size: 84015 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are
ideally suitable as high performance replacements of standard emitters.
| Parameter | Test Conditions |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
5 |
V | |
| Forward Current |
IF |
100 |
mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
| Surge Forward Current | tp = 100 s |
IFSM |
1.5 |
A |
| Power Dissipation |
PV |
210 |
mW | |
| Junction Temperature |
Tj |
100 |
||
| Operating Temperature Range |
Tamb |
55...+100 |
||
| Storage Temperature Range |
Tstg |
55...+100 |
||
| Soldering Temperature | t 5sec, 2 mm from case |
Tsd |
260 |
|
| Thermal Resistance Junction/Ambient |
RthJA |
350 |
K/W |
| Parameter | Test Conditions |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
5 |
V | |
| Forward Current |
IF |
100 |
mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100s |
IFM |
200 |
mA |
| Surge Forward Current | tp = 100 s |
IFSM |
1.5 |
A |
| Power Dissipation |
PV |
210 |
mW | |
| Junction Temperature |
Tj |
100 |
||
| Operating Temperature Range |
Tamb |
55...+100 |
||
| Storage Temperature Range |
Tstg |
55...+100 |
||
| Soldering Temperature | t 5sec, 2 mm from case |
Tsd |
260 |
|
| Thermal Resistance Junction/Ambient |
RthJA |
350 |
K/W |
