TSA1015

The TSA1015 is designed as one kind of PNP silicon transistor that can be used in general purpose application and amplifier application. Features of this device are:(1)high voltage and high current (Vceo= -50 V, Ic= -150 mA);(2)excellent hFE linearity;(3)low noise: NF= 1 dB;(4)complementary to TSC1815.

The absolute maximum ratings of the TSA1015 can be summarized as:(1)collector-base voltage: -50 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -5 V;(4)collector current: -150 mA;(5)base current: -50 mA;(6)collector dissipation: 400 mW;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector cut-off current: -0.1 uA;(2)emitter cut-off current: -0.1 uA;(3)DC current gain: 70 to 400;(4)collector-emitter saturation voltage: -0.1 to -0.3 V;(5)base-emitter voltage: -1.1 V;(6)transistor frequency: 80 MHz;(7)noise figure: 1 to 10 dB;(8)collector output capacitance: 2 to 3.5 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.