TSAL7200, TSAL7300, TSAL7400 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:DIP D/C:08+
TSAL7200, TSAL7300, TSAL7400 Datasheet download

Part Number: TSAL7200
MFG: VISHAY
Package Cooled: DIP
D/C: 08+
MFG:VISHAY Package Cooled:DIP D/C:08+
TSAL7200, TSAL7300, TSAL7400 Datasheet download

MFG: VISHAY
Package Cooled: DIP
D/C: 08+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: TSAL7200
File Size: 84024 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TSAL7300
File Size: 85873 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TSAL7400
File Size: 78580 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VS | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 1.5 | A |
| Power Dissipation | PV | 210 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 55...100 | ||
| Storage Temperature Range | Tstg | 55...100 | ||
| Soldering Temperature | Tsd | 260 | ||
| Thermal Resistance Junction/Ambient | t 5sec, 2 mm from case | RthJA | 350 | K/W |
·Infrared remote control units with high power requirements
·Free air transmission systems
·Infrared source for optical counters and card readers
·IR source for smoke detectors
TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VS | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 1.5 | A |
| Power Dissipation | PV | 210 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 55...100 | ||
| Storage Temperature Range | Tstg | 55...100 | ||
| Soldering Temperature | Tsd | 260 | ||
| Thermal Resistance Junction/Ambient | t 5sec, 2 mm from case | RthJA | 350 | K/W |
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VS | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 1.5 | A |
| Power Dissipation | PV | 210 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 55...100 | ||
| Storage Temperature Range | Tstg | 55...100 | ||
| Soldering Temperature | Tsd | 260 | ||
| Thermal Resistance Junction/Ambient | t 5sec, 2 mm from case | RthJA | 350 | K/W |
