TSHA6500, TSHA6502, TSHA6503 Selling Leads, Datasheet
MFG:vishay Package Cooled:Leaded D/C:08+
TSHA6500, TSHA6502, TSHA6503 Datasheet download
Part Number: TSHA6500
MFG: vishay
Package Cooled: Leaded
D/C: 08+
TSHA6500, TSHA6502, TSHA6503
- Table of contents:
Info of TSHA6500
Info of TSHA6502
Info of TSHA6503
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About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TSH10
PDF/DataSheet Download
Datasheet: TSH10
File Size: 78096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
TSHA6500 General Description
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA6500 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHA6500 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA6500 Typical Application
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
TSHA6502 General Description
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA6502 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHA6502 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA6502 Typical Application
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
TSHA6503 General Description
The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package
TSHA6503 Maximum Ratings
| PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | t 5 s, 2 mm from case |
Tsd |
260 |
|
| Thermal resistance junction/ambient | J-STD-051, leads 7 mm, soldered on PCB |
RthJA |
230 |
K/W |
TSHA6503 Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSHA6503 Typical Application
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
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