TSSP4400, TSSP4500, TSSS2600 Selling Leads, Datasheet
MFG:tfk Package Cooled:tfk D/C:dc95
TSSP4400, TSSP4500, TSSS2600 Datasheet download
Part Number: TSSP4400
MFG: tfk
Package Cooled: tfk
D/C: dc95
TSSP4400, TSSP4500, TSSS2600
- Table of contents:
Info of TSSP4400
Info of TSSP4500
Info of TSSS2600
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About TSS10G45S
PDF/DataSheet Download
Datasheet: TSS10G45S
File Size: 219358 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TSS10G45S
PDF/DataSheet Download
Datasheet: TSS10G45S
File Size: 219358 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TSSS2600
PDF/DataSheet Download
Datasheet: TSSS2600
File Size: 100990 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
TSSP4400 General Description
TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.
TSSP4400 Maximum Ratings
|
Parameter |
Test Conditionsc |
Symbol |
Value |
Unit |
|
Reverse Voltage |
VR |
5 |
V | |
|
Forward Current |
IF |
100 |
mA | |
|
Peak Forward Current |
tp/T=0.5, tp=100s |
IFM |
200 |
mA |
|
Surge Forward Current |
tp=100s |
IFSM |
2.0 |
A |
|
Power Dissipation |
PV |
170 |
mW | |
|
Junction Temperature |
Tj |
100 |
||
|
Operating Temperature Range |
Tamb |
55...+100 |
||
|
Storage Temperature Range |
Tstg |
55...+100 |
||
|
Soldering Temperature |
t5sec, 2 mm from case |
Tsd |
260 |
|
|
Thermal Resistance Junction/Ambient |
RthJA |
450 |
K/W |
TSSP4400 Features
` High radiant power and high radiant intensity
` Suitable for high pulse current operation
` Low forward voltage
` Angle of half intensity = ± 22°
` Peak wavelength p = 925 nm
` High reliability
` Suitable for high pulse current operation
` Low forward voltage
` Angle of half intensity = ± 22°
` Peak wavelength p = 925 nm
` High reliability
TSSP4400 Typical Application
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors.
Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47.
TSSS2600 General Description
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
TSSS2600 Maximum Ratings
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 2 | A |
| Power Dissipation | PV | 170 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 55...+100 | ||
| Storage Temperature Range | Tstg | 55...+100 | ||
| Soldering Temperature | t 5sec, 2 mm from case | Tsd | 260 | |
| Thermal Resistance Junction/Ambient | RthJA | 450 | K/W |
TSSS2600 Features
Low forward voltage
Suitable for DC and high pulse current operation
Side view emitter for miniature design
Horizontal angle of half intensity ± 25°
Vertical angle of half intensity ± 60°
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors
Suitable for DC and high pulse current operation
Side view emitter for miniature design
Horizontal angle of half intensity ± 25°
Vertical angle of half intensity ± 60°
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors
TSSS2600 Typical Application
Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)
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