UHA1H6R8KHD, UHB10FT, UHB20FCT Selling Leads, Datasheet
MFG:nichicon Package Cooled:DIP D/C:09+RoHS
UHA1H6R8KHD, UHB10FT, UHB20FCT Datasheet download
Part Number: UHA1H6R8KHD
MFG: nichicon
Package Cooled: DIP
D/C: 09+RoHS
UHA1H6R8KHD, UHB10FT, UHB20FCT
- Table of contents:
Info of UHA1H6R8KHD
Info of UHB10FT
Info of UHB20FCT
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About UHA1E4R7KHD
PDF/DataSheet Download
Datasheet: UHA1E4R7KHD
File Size: 66932 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
About UHBM45
PDF/DataSheet Download
Datasheet: UHBM45
File Size: 18634 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
About UHBM45
PDF/DataSheet Download
Datasheet: UHBM45
File Size: 18634 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
UHB10FT General Description
UH10FT & UHB10FT datasheet
UHB10FT Maximum Ratings
| PARAMETER | SYMBOL | UH10FT | UHB10FT | UNIT |
| Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) |
VRRM IF(AV) |
300 10 |
V A | |
| Peak forward surge current 10 ms single half sine-wave superimposed on rated load |
IFSM | 180 | A | |
| Operating junction and storage temperature range | TJ, TSTG | - 55 to + 175 | ||
UHB10FT Features
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AC package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
UHB10FT Typical Application
For use in high frequency rectification and freewheeling application in switching mode converter and inverter for consumer.
UHB20FCT General Description
UH20FCT & UHB20FCT datasheet
UHB20FCT Maximum Ratings
| PARAMETER |
SYMBOL |
UH20FCT |
UHB20FCT |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
300 |
V | |
| Maximum average forward rectified per device current (Fig. 1) per diode |
IF(AV) |
20 10 |
A | |
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
180 |
A | |
| Operating junction and storage temperature range |
TJ, TSTG |
- 55 to + 150 |
||
UHB20FCT Features
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
UHB20FCT Typical Application
For use in high frequency power factor correctors,
switching mode power supplies, freewheeling diodes
and secondary dc-to-dc rectification application.
switching mode power supplies, freewheeling diodes
and secondary dc-to-dc rectification application.
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