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UPG2250T5N E2 A UPG2250T5NE2A UPG2250T5N E2 ATR ND UPG2250T5NE2ATRND UPG2250T5N-E2-ATR
UPG2301TQ General Description
NEC's µPG2301TQ is a GaAs HBT MMIC for power amplifi er for Bluetooth Class 1.
This device realizes high effi ciency, high gain and high output power by using InGaP HBT. This device is housed in a low profi le 10-pin plastic TSON package.
UPG2301TQ Maximum Ratings
PARAMETER
Symbol
Ratings
Unit
Supply Voltage
VCC1,2
5.0
V
Vbias
Control Voltage
Vcont
3.6
V
Venable
Circuit Current
ICC
400
mA
Control Current
Icont
0.5
mA
Ienable
Power Dissipation
PD
700 Note
mW
Operating Ambient Temperature
TA
−40 to +85
Storage Temperature
TSTG
-55 to 150
Input Power
Pin
+10
dBm
Note Mounted on double copper-clad 50 * 50 * 1.6 mm epoxy glass PWB, TA = +85
UPG2301TQ Features
• OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz (2 450 MHz TYP.) • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.) • CONTROL VOLTAGE Vcont = 0 to 3.6 V (2.5 V TYP.) Venable = 0 to 3.1 V (2.9 V TYP.) • CIRCUIT CURRENT ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9 V, Pin = +4 dBm • MAXIMUM POWER Pout(MAX.) = +23 dBm TYP.@ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9 V, Pin = +4 dBm • GAIN CONTROL RANGE GCR = 23 dB TYP.@ VCC1, 2 = Vbias = 3.3 V, Vcont = 0 to 2.5 V, Venable = 2.9 V, Pin = +4 dBm • POWER GAIN GP = 23 dB TYP.(Reference value) • HIGH EFFICIENCY PAE = 50% TYP.(Reference value) • SHUT DOWN FUNCTION • HIGH-DENSITY SURFACE MOUNTING 10 pin plastic TSON package (2.4 × 2.55 × 0.6 mm)
UPG2301TQ Typical Application
• POWER AMPLIFIER FOR BLUETOOTH CLASS 1 • WIRELESS LAN