V60100C, V60100P, V60100P-E3/45 Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-220AB D/C:2010+
V60100C, V60100P, V60100P-E3/45 Datasheet download
Part Number: V60100C
MFG: Vishay
Package Cooled: TO-220AB
D/C: 2010+
V60100C, V60100P, V60100P-E3/45
- Table of contents:
Info of V60100C
Info of V60100P
Info of V60100P-E3/45
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About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
V60100C General Description
V60100C & VB60100C datasheet
V60100C Maximum Ratings
| MAXIMUM RATINGS (TA = 25 unless otherwise noted) | ||||
| PARAMETER |
SYMBOLS |
V60100C |
VB60100C |
UNITS |
| Maximum repetitive peak reverse voltage |
VRRM |
100 |
V | |
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) |
60 30 |
A | |
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
320 | ||
| Operating junction and storage temperature range |
TJ, TSTG |
- 40 to + 150 |
| |
V60100C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V60100C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
V60100P General Description
V60100P datasheet
V60100P Maximum Ratings
| PARAMETER | SYMBOL | V60100P | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 100 | V |
| Maximum average forward rectified (Fig. 1) per device per diode |
IF(AV) | 60 30 |
A |
| Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode |
IFSM | 350 | A |
| Peak repetitive reverse current per diode at tp = 2 s, 1 kHz | IRRM | 1.0 | |
| Voltage rate of change (rated VR) | dV/dt | 10000 | V/s |
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 |
V60100P Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V60100P Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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