VI40120C, VI40150C, VI402909FU Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-262AA D/C:2010+
VI40120C, VI40150C, VI402909FU Datasheet download
Part Number: VI40120C
MFG: Vishay
Package Cooled: TO-262AA
D/C: 2010+
VI40120C, VI40150C, VI402909FU
- Table of contents:
Info of VI40120C
Info of VI40150C
Info of VI402909FU
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Datasheet:
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Manufacturer:
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VI40120C General Description
V40120C, VF40120C, VB40120C & VI40120C datasheet
VI40120C Maximum Ratings
| PARAMETER |
SYMBOL |
V40120C |
VB40120C |
VI40120C |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
120 |
V | ||
| Maximum average forward rectified current per device (see Fig. 1) per diode |
IF(AV) |
40 20 |
A | ||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
250 |
A | ||
| Peak repetitive reverse current per diode at tp = 2 s, 1 kHz |
IRRM |
1.0 |
A | ||
| Voltage rate of change (rated VR) |
dv/dt |
10000 |
V/s | ||
| Operating junction and storage temperature range |
TJ, TSTG |
- 20 to + 150 |
|||
VI40120C Features
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak of 245 (for TO-263AB package)
• Solder Dip 260 , 40 seconds (for TO-220 & TO-262 package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak of 245 (for TO-263AB package)
• Solder Dip 260 , 40 seconds (for TO-220 & TO-262 package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VI40150C General Description
V40150C, VF40150C, VB40150C & VI40150C datasheet
VI40150C Maximum Ratings
| PARAMETER | SYMBOL |
V40150C |
VF40150C |
VB40150C |
VI40150C |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
150 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
40 20 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
160 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
- 55 to + 150 |
||||
VI40150C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VI40150C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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