MFG:STMicroelectronics (VA) Category:Integrated Circuits (ICs) Package Cooled:7000 D/C:06+07+pb-free
VN751PT, VN751PT13TR, VN770 Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics (VA)
Package Cooled: 7000
D/C: 06+07+pb-free
Description: IC DRIVER HIGHSIDE 2.5A PPAK-5
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PDF/DataSheet Download
Datasheet: VN751PT
File Size: 368581 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VN751PT13TR
File Size: 368581 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VN770
File Size: 89708 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | VN751PT |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | PPAK (4 leads + tab) |
| Mounting Type | Surface Mount |
| Type | High Side |
| Voltage - Supply | 5.5 V ~ 36 V |
| On-State Resistance | 60 mOhm |
| Current - Output / Channel | 2.5A |
| Current - Peak Output | 6A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 125°C |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VN751PT VN751PT 497 6808 5 ND 49768085ND 497-6808-5 |
The VN751PT is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes. Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. This device is especially suitable for industrial applications in norms conformity with IEC 61131-2 (Programmable Controllers International Standard)
|
Rating |
Pin |
Symbol |
Value |
Unit |
|
Power Dissipation Case 221A (TO220) (TJ = +25°C) Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase Case 936 (D2PAK) (TJ = +25°C) Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase |
|
PD RqJA RqJC PD RqJA RqJC |
Internally Limited 65 5.0 Internally Limited 70 5.0 |
W °C/W °C/W W °C/W °C/W |
|
Storage Temperature Range |
Tstg |
65 to 150 |
°C | |
|
Minimum ESD Rating (Human Body Model: C = 100pF, R = 1.5 k) |
3.0 |
KV | ||
|
Lead Temperature (Soldering, 10 sec.) |
260 |
°C | ||
|
Maximum Junction Temperature |
TJ |
150 |
°C | |
|
Maximum Supply Voltage |
Vin |
°C |
| Technical/Catalog Information | VN751PT13TR |
| Vendor | STMicroelectronics (VA) |
| Category | Integrated Circuits (ICs) |
| Package / Case | PPAK (4 leads + tab) |
| Mounting Type | Surface Mount |
| Type | High Side |
| Voltage - Supply | 5.5 V ~ 36 V |
| On-State Resistance | 60 mOhm |
| Current - Output / Channel | 2.5A |
| Current - Peak Output | 6A |
| Packaging | Cut Tape (CT) |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 125°C |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VN751PT13TR VN751PT13TR 497 6114 1 ND 49761141ND 497-6114-1 |
The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shut-down to protect the chip from over temperature and short circuit,status output to provide indication for open load in off and on state, overtemperature conditions and stuck-on to VCC.
DUAL HIGH-SIDE SWITCH From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl)and in case of open open load (tpol) respectively.This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two Power MOS areas.This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula:Pdem =0.5• Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage.In this device if the GND pin is disconnected,with VCC not exceeding 16V, both channel will switch off.
Power MOSFETs During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The devices can be used as a switch from DC to very high frequency.
|
Symbol |
Parameter |
Value |
Unit |
|
V(BR)DSS |
Drain-Source Brekdown Voltage |
40 |
V |
|
IOUT |
Output Current (continuous) |
9 | A |
|
IR |
Reverse Output Current |
-9 |
A |
|
IIN |
Input Current |
±10 | mA |
|
-VCC |
Reverse Supply Current |
-4 |
V |
| ISTAT |
Status Current |
±10 | mA |
| VESD |
Electrostatic Discharge (C=100pF,R=1.5K; ) |
2000 | V |
|
Ptot |
Power Dissipation@ TC=25°C |
Internally Limited |
W |
| Tj |
Junction operating temperature |
-40 to 150 | |
|
Tstg |
Storage Temperature |
-55 to 150 |
|
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