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VNQ810, VNQ810M, VNQ810M13TR

Table of contents:
Info of VNQ810
Info of VNQ810M
Info of VNQ810M13TR

VNQ810, VNQ810M, VNQ810M13TR Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:SOP-28L D/C:2009+

VNQ810, VNQ810M, VNQ810M13TR Datasheet download

Five Points

Part Number: VNQ810

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: SOP-28L

D/C: 2009+

Description: IC SSR HISIDE QUAD 28-SOIC

Price Break

1
10
100
250
500
1000
2500

Unit Price

4.79000
4.45800
3.46710
2.80672
2.39396
2.22885
2.11328

Extended Price

4.79
44.58
346.71
701.68
1196.98
2228.85
5283.20

(All prices are in USD) Prices for reference only

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VNQ810 Parameters

Technical/Catalog Information	VNQ810
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	28-SOIC (7.5mm Width)
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	160 mOhm
Current - Output / Channel	-
Current - Peak Output	5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	4
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNQ810 VNQ810 497 2703 5 ND 49727035ND 497-2703-5

VNQ810 General Description

The VNQ810 is a quad HSD formed by assembling two VND810 chips in the same SO-28 package. The VND810 is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground.

Active V_CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state . Output shorted to V_CC is detected in the off state. Device automatically turns off in case of ground pin disconnection.

VNQ810 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CC	DC Supply Voltage	41	V
-V_CC	Reverse DC Supply Voltage	-0.3	V
- I_gnd	DC Reverse Ground Pin Current	-200	mA
I_OUT	DC Output current	Internally Limited	A
-I_OUT	Reverse DC Output Current	-6	A
I_IN	DC Input Current	+/- 10	mA
I_STAT	DC Status Current	+/- 10	mA
V_ESD	Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT - V_CC	4000 4000 5000 5000	V V V V
_{E_MAX}	Maximum Switching Energy (L=1.38mH; R_L=0; V_bat=13.5V; T_jstart=150; I_L=5A)	23	mJ
P_tot	Power dissipation (per island) at T_lead=25°C	6.25	W
T_j	Junction operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

(**) See application schematic at page 9

VNQ810 Connection Diagram

VNQ810M Parameters

Technical/Catalog Information	VNQ810M
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	28-SOIC (7.5mm Width)
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	150 mOhm
Current - Output / Channel	-
Current - Peak Output	900mA
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	4
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNQ810M VNQ810M

VNQ810M General Description

The VNQ810M is a quad HSD formed by assembling two VND810M chips in the same SO-28 package. The VND810M is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground.

Active V_CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The current limitation threshold is aimed at detecting the 21W/12V standard bulb as an overload fault.The device detects open load condition both in on and off state . Output shorted to V_CC is detected in the off state. Device automatically turns off in case of ground pin disconnection.

VNQ810M Maximum Ratings

Symbol	Parameter	Value	Unit
V_CC	DC Supply Voltage	41	V
-V_CC	Reverse DC Supply Voltage	-0.3	V
- I_gnd	DC Reverse Ground Pin Current	-200	mA
I_OUT	DC Output current	Internally Limited	A
-I_OUT	Reverse DC Output Current	-6	A
I_IN	DC Input Current	+/- 10	mA
I_STAT	DC Status Current	+/- 10	mA
V_ESD	Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT - V_CC	4000 4000 5000 5000	V V V V
_{E_MAX}	Maximum Switching Energy (L=310mH; R_L=0; V_bat=13.5V; T_jstart=150; I_L=0.9A)	174	mJ
P_tot	Power dissipation (per island) at T_lead=25°C	6.25	W
T_j	Junction operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

(**) See application schematic at page 9

VNQ810M Connection Diagram

VNQ810M13TR Parameters

Technical/Catalog Information	VNQ810M13TR
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	28-SOIC (7.5mm Width)
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	150 mOhm
Current - Output / Channel	-
Current - Peak Output	900mA
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	4
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNQ810M13TR VNQ810M13TR

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