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VRF150, VRF151, VRF151G

VRF150, VRF151, VRF151G Selling Leads, Datasheet

MFG:Microsemi-PPG  Category:Undefined Category  D/C:06+/07+

VRF150 Picture

VRF150, VRF151, VRF151G Datasheet download

Five Points

Part Number: VRF150

Category: Undefined Category

MFG: Microsemi-PPG

Package Cooled:

D/C: 06+/07+

Description: MOSFET RF PWR N-CH 50V 300W M208

Price Break

1
25
100
500
1000
5000
10000

Unit Price

63.66000
52.59200
44.28800
38.75200
35.98400
34.60000
33.21600

Extended Price

63.66
1314.80
4428.80
19376.00
35984.00
173000.00
332160.00

(All prices are in USD) Prices for reference only
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VRF150 Parameters

Technical/Catalog InformationVRF150
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 170V
Current Rating16A
Package / CaseM174
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VRF150
VRF150
VRF150MP ND
VRF150MPND
VRF150MP

VRF150 General Description

The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion.

VRF150 Maximum Ratings

Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
125
V
VDGO
Drain-Gate Voltage
125
V
VGS
Gate-Source Voltage
±40
V
ID
Drain Current
16
A
PDISS
Total Device Power Dissipation
300
W
TJ
Max Operating Junction Temperature
+200
TSTG
Storage Temperature
-65 to +150

VRF150 Features

·  150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V
·  150W WITH 18dB MIN GAIN @ 30MHz, 50V
·  EXCELLENT STABILITY & LOW IMD
·  COMMON SOURCE CONFIGURATION
·  30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
·  NITRIDE PASSIVATED
·  REFRACTORY GOLD METALLIZATION

VRF150 Connection Diagram

VRF151 Parameters

Technical/Catalog InformationVRF151
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 170V
Current Rating16A
Package / CaseM174
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VRF151
VRF151
VRF151MP ND
VRF151MPND
VRF151MP

VRF151 General Description

The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion.

VRF151 Maximum Ratings

Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
125
V
VDGO
Drain-Gate Voltage
125
V
VGS
Gate-Source Voltage
±40
V
ID
Drain Current
16
A
PDISS
Total Device Power Dissipation
300
W
TJ
Max Operating Junction Temperature
+200
TSTG
Storage Temperature
-65 to +150

VRF151 Features

· 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V
· 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V
· EXCELLENT STABILITY & LOW IMD
· COMMON SOURCE CONFIGURATION
· 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
· NITRIDE PASSIVATED
· REFRACTORY GOLD METALLIZATION

VRF151G Parameters

Technical/Catalog InformationVRF151G
VendorMicrosemi-PPG
CategoryUndefined Category
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VRF151G
VRF151G
VRF151GMP ND
VRF151GMPND
VRF151GMP

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