VSMF3710, VSMF4710, VSMF4720 Selling Leads, Datasheet
MFG:Vishay Package Cooled:Surface mount D/C:2010+
VSMF3710, VSMF4710, VSMF4720 Datasheet download
Part Number: VSMF3710
MFG: Vishay
Package Cooled: Surface mount
D/C: 2010+
VSMF3710, VSMF4710, VSMF4720
- Table of contents:
Info of VSMF3710
Info of VSMF4710
Info of VSMF4720
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About VSM0805
PDF/DataSheet Download
Datasheet: VSM0805
File Size: 68211 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About VSM0805
PDF/DataSheet Download
Datasheet: VSM0805
File Size: 68211 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About VSM0805
PDF/DataSheet Download
Datasheet: VSM0805
File Size: 68211 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
VSMF3710 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
VSMF3710 Maximum Ratings
|
Parameter |
Test condition |
Symbol |
Value |
Value |
| Reverse voltage |
VR |
5 | V | |
| Forward current |
IF |
100 |
mA | |
| Peak forward current |
tp/T = 0.5, tp = 100 µs |
IFM |
200 |
mA |
| Surge forward current |
tp = 100 µs |
IFSM |
1 |
A |
| Power dissipation |
PV |
170 |
mW | |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature |
acc. figure 8, J-STD-020B |
Tsd |
260 |
|
| Thermal resistance junction / ambient |
RthJA |
400 |
K/W |
VSMF3710 Features
• High radiant power
• High speed: tr = 30 ns
• High modulation band width: fc = 12 MHz
• Peak wavelength: p = 890 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• High speed: tr = 30 ns
• High modulation band width: fc = 12 MHz
• Peak wavelength: p = 890 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VSMF3710 Typical Application
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
VSMF4710 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4710 Maximum Ratings
| PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNIT |
| Reverse voltage | VR | 5 | V | |
| Forward current | IF | 100 | mA | |
| Peak forward current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge forward current | tp = 100 s | IFSM | 1 | A |
| Power dissipation | PV | 160 | mW |
VSMF4710 Features
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
VSMF4710 Typical Application
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
• High power emitter for low space applications
• High performance transmissive or reflective sensors
VSMF4720 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4720 Maximum Ratings
| Parameter | Test condition | Symbol | Value | Uni |
| Reverse voltage | VR | 5 | V | |
| Forward current | IF | 100 | mA | |
| Peak forward current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge forward current | tp = 100 s | IFSM | 1 | A |
| Power dissipation | PV | 160 | mW | |
| Junction temperature | Tj | 100 | ||
| Operating temperature range | Tamb | - 40 to + 85 | ||
| Storage temperature range | Tstg | - 40 to + 100 | ||
| Soldering temperature | Acc. figure 8, J-STD-020B | Tsd | 260 | |
| Thermal resistance junction/ambient | J-STD-051, soldered on PCB | RthJA | 250 | K/W |
VSMF4720 Features
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
VSMF4720 Typical Application
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
• High power emitter for low space applications
• High performance transmissive or reflective sensors
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