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The XP133A0175SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
XP133A0175SR Maximum Ratings
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
30
V
Gate-Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
5
A
Drain Current (Pulse)
Idp
15
A
Reverse Drain Current
Idr
5
A
Continuous Channel Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55~150
XP133A0175SR Features
Low on-state resistance: Rds(on)=0.048(Vgs=10V) Rds(on)=0.075(Vgs=4.5V) Ultra high-speed switching Operational Voltage: 4.5V High density mounting: SOP-8
XP133A0175SR Typical Application
Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems
XP133A0175SR Connection Diagram
XP133A0245SR General Description
The XP133A0245SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
XP133A0245SR Maximum Ratings
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss
±8
V
Drain Current (DC)
Id
5
A
Drain Current (Pulse)
Idp
15
A
Reverse Drain Current
Idr
5
A
Continuous Channel Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55~150
XP133A0245SR Features
Low on-state resistance: Rds(on)=0.045(Vgs=4.5V) Rds(on)=0.060(Vgs=2.5V) Rds(on)=0.1(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.5V High density mounting: SOP-8
XP133A0245SR Typical Application
Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems