XP1006-FA Selling Leads, Price trend, XP1006-FA DataSheet download, circuit diagram from SeekIC.com

Features: X-Band 10W Power AmplifierFlange Package21.5 dB Large Signal Gain+40.5 dBm Saturated Output Power37% Power Added Efficiency100% On-Wafer RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 4.5 A Gate Bias Voltage (Vg) +0.0 VDC I...

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SeekIC No. : 004548896 Detail

XP1006-FA: Features: X-Band 10W Power AmplifierFlange Package21.5 dB Large Signal Gain+40.5 dBm Saturated Output Power37% Power Added Efficiency100% On-Wafer RF, DC and Output Power TestingSpecifications ...

XP1006-FA Data Sheet

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Part Number:: XP1006-FA
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/24

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Product Details

Description

Features:

X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing

Specifications

Supply Voltage (Vd)	+6.0 VDC
Supply Current (Id)	4.5 A
Gate Bias Voltage (Vg)	+0.0 VDC
Input Power (Pin)	TBD
Storage Temperature (Tstg)	-65 to +165
Operating Temperature (Ta)	-55 to MTTF Table¹
Channel Temperature (Tch)	MTTF Table¹

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

Description

Mimix Broadband's three stage 8.5-11.0 GHz GaAs packaged power amplifier XP1006-FA has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power.

This device uses Mimix XP1006-FA Broadband's 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. XP1006-FA is well suited for radar applications.

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XP1006-FA

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