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DataSheet: MGP7N60ED
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MGP7N60ED
- Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
- 144.18K
- ONSEMI [ON Semiconductor]
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MGP7N60ED
- IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
- 148.86K
- Click Download
MGP7N60ED
- IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
- 144.18K
- Click Download