2N59C, 2N60, 2N600 Selling Leads, Datasheet
MFG:MOTOROLA D/C:CAN
2N59C, 2N60, 2N600
- Table of contents:
Info of 2N59C
Info of 2N60
Info of 2N600
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About 2N5001
PDF/DataSheet Download
Datasheet: 2N5001
File Size: 286726 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About 2N6027
PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About 2N6027
PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
2N60 General Description
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2N60 Maximum Ratings
|
PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
| Drain-Source Voltage |
VDSS |
600 |
V | |
| Gate-Source Voltage |
VGSS |
±30 |
V | |
| Avalanche Current (Note 2) |
IAR |
2.0 |
A | |
| Drain Current Continuous | TC = 25 |
ID |
2.0 |
A |
| TC = 100 |
1.26 |
A | ||
| Drain Current Pulsed (Note 2) |
IDP |
8.0 |
A | |
| Avalanche Energy | Repetitive(Note 2) |
EAR |
4.5 |
mJ |
| Single Pulse(Note 3) |
EAS |
140 |
mJ | |
| Peak Diode Recovery dv/dt (Note 4) |
dv/dt |
4.5 |
V/ns | |
| Total Power Dissipation | TC = 25 |
PD |
45 |
W |
| Derate above 25 |
0.36 |
W/ | ||
| Junction Temperature |
TJ |
+150 |
||
| Storage Temperature |
TSTG |
-55 ~ +150 |
||
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25
4. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25
2N60 Features
·RDS(ON) = 3.8Ω@VGS = 10V.
·Ultra Low gate charge (typical 9.0nC)
·Low reverse transfer capacitance (Crss = typical 5.0 pF)
·Fast switching capability
·Avalanche energy specified
·Improved dv/dt capability, high ruggedness
·Ultra Low gate charge (typical 9.0nC)
·Low reverse transfer capacitance (Crss = typical 5.0 pF)
·Fast switching capability
·Avalanche energy specified
·Improved dv/dt capability, high ruggedness
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