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2N6031

Transistors Bipolar (BJT) 16A 140V 200W PNP

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SeekIC No. : 00213603 Detail

2N6031: Transistors Bipolar (BJT) 16A 140V 200W PNP

2N6031 Data Sheet

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Part Number:
2N6031
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 16 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 1 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 16 A
Collector- Emitter Voltage VCEO Max : 140 V
Maximum Operating Frequency : 1 MHz (Min)


Application

High Collector Emitter Sustaining Voltage VCEO(sus)= 140 Vdc
High DC Current Gain @ IC= 8.0 Adc
Low CollectorEmitter Saturation Voltage VCE(sat)= 1.0 Vdc (Max) @ IC= 10 Adc






Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 140 Vdc
CollectorBase Voltage VCB 140 Vdc
EmitterBase Voltage VEB 7.0 Vdc
Collector CurrentContinuous Peak IC 16
20		 Adc
Base Current Continuous IB 5.0 Adc
Total Device Dissipation @ TC = 25
Derate above 25		 PD 200
1.14		 Watts
W/
Operating and Storage Junction
Temperature Range		 TJ, Tstg 65 to +200





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