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2SJ312, 2SJ313, 2SJ314

Table of contents:
Info of 2SJ312
Info of 2SJ313
Info of 2SJ314

2SJ312, 2SJ313, 2SJ314 Selling Leads, Datasheet

MFG:TOS Package Cooled:SOT263 D/C:07+

2SJ312, 2SJ313, 2SJ314 Datasheet download

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Part Number: 2SJ312

MFG: TOS

Package Cooled: SOT263

D/C: 07+

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2SJ312 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−60	V
Drain−gate voltage (R_GS = 20 k)		V_GSS	−60	V
Gate−source voltage		V_G2S	±20	V
Drain current	DC (Note 1)	I_D	−14	A
Drain current	Pulse (Note 1)	I_DP	−56	A
Drain power dissipation (Tc = 25)		P_D	40	W
Channel temperature		T_ch	150
Storage temperature range		T_STG	-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SJ312 Typical Application

4-V gate drive
Low drain−source ON resistance : R_{DS (ON)} = 80 m (typ.)
High forward transfer admittance : |Yfs| = 8.0 S (typ.)
Low leakage current : I_DSS = −100 A (max) (V_DS= −60 V)
Enhancement mode : V_th= −0.8~−2.0 V (V_DS = −10 V, ID = −1 mA)

2SJ313 Maximum Ratings

Characteristics	Symbol	Ratings	Unit
Drain-Source Voltage	V_DSS	−180	V
Gate-Source Voltage	V_GSS	±20	V
Drain current (Note 1)	I_D	−1	A
Power dissipation (Tc = 25°C)	P_D	25	W
Channel Temperature	T_ch	150
Storage temperature range	T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SJ313 Typical Application

High breakdown voltage: V_DSS = −180 V
High forward transfer admittance: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013

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