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2SJ104

Application`High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)`Low RDS(ON)= 40(typ.) (IDSS= 5 mA)`Complimentary to 2SK364 Specifications Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range ...

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2SJ104: Application`High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)`Low RDS(ON)= 40(typ.) (IDSS= 5 mA)`Complimentary to 2SK364 Specifications Characteristics Symbol Rating Unit Gat...

2SJ104 Data Sheet

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Part Number:
2SJ104
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

`High input impedance: IGSS = 1.0 nA (max) (VGS= 25 V) 
`Low RDS(ON) = 40(typ.) (IDSS= 5 mA) 
`Complimentary to 2SK364


Specifications

Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
25
-10
400
125
-55~125
V
mA
mW


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conce and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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