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2SJ105

Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)• Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = −5 mA)• Complimentary to 2SK330• Small packageSpecifications Characteristics Symbol Rating Unit Gate...

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2SJ105: Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)• Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = −5 mA)• Complimen...

2SJ105 Data Sheet

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Part Number:
2SJ105
Supply Ability:
5000

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Product Details

Description



Application

• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = −5 mA)
• Complimentary to 2SK330
• Small package


Specifications

Characteristics Symbol Rating Unit
Gate-drain voltage VGDS 50 V
Gate current IG -10 mA
Drain power dissipation PD 200 mW
Junction temperature Tj 125
Storage temperature range Tstg ?55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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