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4N24, 4N24/TIL103, 4N24A

Table of contents:
Info of 4N24
Info of 4N24/TIL103
Info of 4N24A

4N24, 4N24/TIL103, 4N24A Selling Leads, Datasheet

MFG:TI Package Cooled:N/A D/C:388

4N24, 4N24/TIL103, 4N24A Datasheet download

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Part Number: 4N24

MFG: TI

Package Cooled: N/A

D/C: 388

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4N24 General Description

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.

4N24 Maximum Ratings

Input to Output Voltage............................................................................................. ±1kV
Emitter-Collector Voltage.................................................................................................4V
Collector-Emitter Voltage (V_CEO, I_F = 0).........................................................................35V
Collector-Base Voltage (V_CEO, I_F = 0).............................................................................35V
Reverse Input Voltage .....................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65 Free-Air Temperature (see note 1).......40mA
Peak Forward Input Current (Value applies for tw 1s PRR < 300 pps)........................1A
Continuous Collector Current.......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C
Free-Air Temperature (see Note 2)......300mW
Storage Temperature.................................................................... ...........-65°C to +125°C
Operating Free-Air Temperature Range............................... ....................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)........................240°C

4N24 Features

* Overall current gain...1.5 typical (4N24)
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation

4N24 Typical Application

* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control

4N24A General Description

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.

4N24A Maximum Ratings

Input to Output Voltage..............................................................................................±1kV
Emitter-Collector Voltage.................................................................................................4V
Collector-Emitter Voltage...............................................................................................35V
Collector-Base Voltage...................................................................................................35V
Reverse Input Voltage ....................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....40mA
Peak Forward Input Current (Value applies for tw 1s, PRR < 300 pps).....................1A
Continuous Collector Current.....................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)...300mW
Storage Temperature.............................................................................-65°C to +125°C
Operating Free-Air Temperature Range.................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)....................240°C

4N24A Features

* Collector is electrically isolated from the case.
* Overall current gain...1.5 typical (4N24A)
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation

4N24A Typical Application

* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control

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