4N25M

Current Transfer Ratio :
Maximum Collector Current :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Emitter Saturation Voltage : 0.5 V


Features:

`UL recognized (File # E90700, Volume 2)
`VDE recognized (File # 102497)
Add option V (e.g., 4N25VM)




Application

·Power supply regulators
·Digital logic inputs
·Microprocessor inputs




Pinout






Specifications

Symbol	Parameter	Value	Units
TSTG	Storage Temperature	-55 to +150
TOPR	Operating Temperature	-55 to +100
TSOL	Wave solder temperature (see page 8 for reflow solder profile)	260 for 10 sec
PD	Total Device Power Dissipation @ TA= 25 Derate above 25	250	mW
		2.94

Description

The 4N25M is designed as one kind of general purpose 6-pin phototransistor optocoupler device that can be used in (1)Power supply regulators; (2)Digital logic inputs; (3)Microprocessor inputs applications. And this 4N25M consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. Features of the 4N25M are:(1)UL recognized (File # E90700, Volume 2); (2)VDE recognized (File # 102497) - Add option V (e.g., 4N25VM).

The absolute maximum ratings of the 4N25M can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -55 to +100 °C;(3)Wave solder temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ TA=25°C: 250 mW;(5)Derate above 25°C: 2.94 mW/°C;(6)DC/Average Forward Input Current: 60 mA;(7)Reverse Input Voltage: 6 V;(8)Forward Current - Peak (300s, 2% Duty Cycle): 3.0 A;(9)LED Power Dissipation @ TA=25°C: 120 mW;(10)Derate above 25°C: 1.41 mW/°C.

The electrical characteristics of this 4N25M can be summarized as:(1)Input Forward Voltage: 1.18 to 1.50 V;(2)Reverse Leakage Current: 0.001 to 10 A;(3)Capacitance: 8 pF;(4)Collector-Emitter Breakdown Voltage: 30 to 100 V;(5)Collector-Base Breakdown Voltage: 70 to 120 V;(6)Emitter-Collector Breakdown Voltage: 7.0 to 10 V;(7)Collector-Emitter Dark Current: 1 to 50 nA. If you want to know more information about the 4N25M, please download the datasheet in www.seekic.com or www.chinaicmart.com .

The general purpose optocouplers 4N25M consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

Parameters:

Technical/Catalog Information	4N25M
Vendor	Lite-On Inc
Category	Isolators
Isolation Voltage	2500Vrms
Input Type	DC
Output Type	Transistor with Base
Current - Output/Channel	100mA
Voltage - Output	30V
Vce Saturation (Max)	500mV
Current Transfer Ratio (Min)	20% @ 10mA
Mounting Type	Through Hole
Package / Case	6-DIP
Packaging	Tube
Number of Circuits	1 - Single
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	4N25M 4N25M 4N25MLT ND 4N25MLTND 4N25MLT