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The 4N25(G)V/ 4N35(G)V series consists of a photo-transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
4N25V Maximum Ratings
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
tp 10s
IFSM
3
A
Power dissipation
Tamb 25°C
PV
100
mW
Junction temperature
Tj
125
°C
4N25V Features
*BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 *FIMKO (SETI): EN 60950, Certificate number 12399 *Underwriters Laboratory (UL) 1577 recognized,file number E-76222 *VDE 0884, Certificate number 94778 VDE 0884 related features: *Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak *Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV *Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) *Rated recurring peak voltage (repetitive) VIORM = 600 VRMS *Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 *Thickness through insulation 0.75 mm General features: *Isolation materials according to UL94-VO *Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664) *Climatic classification 55/100/21 (IEC 68 part 1) *Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection *Low temperature coefficient of CTR *Coupling System A
4N25V Typical Application
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 300 V For appl. class I III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver,computer peripheral interface, microprocessor system interface.
4N25-X006 General Description
Optocoupler, Phototransistor Output, With Base Connection