4N28-X019T, 4N29, 4N29A Selling Leads, Datasheet
MFG:VishaySemicond Package Cooled:03+ D/C:20000
4N28-X019T, 4N29, 4N29A Datasheet download
Part Number: 4N28-X019T
MFG: VishaySemicond
Package Cooled: 03+
D/C: 20000
MFG:VishaySemicond Package Cooled:03+ D/C:20000
4N28-X019T, 4N29, 4N29A Datasheet download
MFG: VishaySemicond
Package Cooled: 03+
D/C: 20000
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PDF/DataSheet Download
Datasheet: 4N22
File Size: 96490 KB
Manufacturer: MICROPAC [Micropac Industries]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 4N29
File Size: 286169 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 4N29A
File Size: 286169 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The 4N29,4N30,4N31,4N32,4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
ABSOLUTE MAXIMUM RATINGS (TA = 25 Unless otherwise specified.) | |||
Parameter | Symbol | Value | Units |
TOTAL DEVICE Storage Temperature |
TSTG | -55 to +150 | |
Operating Temperature | TOPR | -55 to +100 | |
Lead Solder Temperature | TSOL | 260 for 10 sec | |
Total Device Power Dissipation @ TA= 25 Derate above 25 |
PD | 250 3.3 |
mW mW/ |
EMITTER Continuous Forward Current |
IF | 80 | mA |
Reverse Voltage | VR | 3 | V |
Forward Current - Peak (300s, 2% Duty Cycle) | 1F(pk) | 3.0 | A |
LED Power Dissipation @ TA = 25 | PD | 150 | mW |
Derate above 25 | 2.0 | mW/ | |
DETECTOR Collector-Emitter Breakdown Voltage |
BVCEO | 30 | V |
Collector-Base Breakdown Voltage | BVCBO | 30 | V |
Emitter-Collector Breakdown Voltage | BVECO | 5 | V |
Detector Power Dissipation @ TA = 25 | PD | 150 2.0 |
mW mW/ |
Derate above 25 | |||
Continuous Collector Current | IC | 150 | mA |