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The 4N29,4N30,4N31,4N32,4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
4N30 Maximum Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 Unless otherwise specified.)
Parameter
Symbol
Value
Units
TOTAL DEVICE Storage Temperature
TSTG
-55 to +150
Operating Temperature
TOPR
-55 to +100
Lead Solder Temperature
TSOL
260 for 10 sec
Total Device Power Dissipation @ TA= 25 Derate above 25
PD
250 3.3
mW mW/
EMITTER Continuous Forward Current
IF
80
mA
Reverse Voltage
VR
3
V
Forward Current - Peak (300s, 2% Duty Cycle)
1F(pk)
3.0
A
LED Power Dissipation @ TA = 25
PD
150
mW
Derate above 25
2.0
mW/
DETECTOR Collector-Emitter Breakdown Voltage
BVCEO
30
V
Collector-Base Breakdown Voltage
BVCBO
30
V
Emitter-Collector Breakdown Voltage
BVECO
5
V
Detector Power Dissipation @ TA = 25
PD
150 2.0
mW mW/
Derate above 25
Continuous Collector Current
IC
150
mA
4N30 Features
* High sensitivity to low input drive current * Meets or exceeds all JEDEC Registered Specifications * VDE 0884 approval available as a test option-add option .300. (e.g., 4N29.300)
4N30 Typical Application
* Low power logic circuits * Telecommunications equipment * Portable electronics * Solid state relays * Interfacing coupling systems of different potentials and impedances.
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples