Current Transfer Ratio
:
Maximum Forward Diode Voltage
: 1.5 V
Maximum Operating Temperature
: + 100 C
Minimum Operating Temperature
: - 40 C
Maximum Power Dissipation
: 250 mW
Packaging
: Bulk
Input Type
: DC
Maximum Collector Current
: 150 mA
Maximum Collector Emitter Voltage
: 30 V
Isolation Voltage
: 5300 Vrms
Maximum Collector Emitter Saturation Voltage
: 1 V
Package / Case
: PDIP-6
Pinout
Specifications
| 4N33M |
Full Production |
RoHS Compliant |
$0.257 |
DIP-W |
6 |
BULK |
TBD |
| 4N33SM |
Full Production |
RoHS Compliant |
$0.207 |
SMDIP-W |
6 |
BULK |
TBD |
| 4N33SR2M |
Full Production |
RoHS Compliant |
$0.207 |
SMDIP-W |
6 |
TAPE REEL |
TBD |
| 4N33VM |
Full Production |
RoHS Compliant |
$0.207 |
DIP-W |
6 |
BULK |
TBD |
* Fairchild 1,000 piece Budgetary Pricing
|
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
DescriptionThe 4N33M is designed as one kind of general purpose 6-pin phototransistor optocoupler device that can be used in (1)Low power logic circuits; (2)Telecommunications equipment; (3)Portable electronics; (4)Solid state relays; (5)Interfacing coupling systems of different potentials and impedances applications. And this 4N33M has a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Features of the 4N33M are:(1)High sensitivity to low input drive current; (2)Meets or exceeds all JEDEC Registered Specifications; (3)UL, C-UL approved; (4)VDE 0884 approval available as a test option add option V (e.g., 4N29VM).
The absolute maximum ratings of the 4N33M can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -55 to +100 °C;(3)Wave solder temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ TA=25°C: 250 mW;(5)Derate above 25°C: 3.3 mW/°C;(6)DC/Average Forward Input Current: 80 mA;(7)Reverse Input Voltage: 3 V;(8)Forward Current - Peak (300s, 2% Duty Cycle): 3.0 A;(9)LED Power Dissipation @ TA=25°C: 150 mW;(10)Derate above 25°C: 2.0 mW/°C.
The electrical characteristics of this 4N33M can be summarized as:(1)Input Forward Voltage: 1.2 to 1.5 V;(2)Reverse Leakage Current: 0.001 to 100 A;(3)Capacitance: 150 pF;(4)Collector-Emitter Breakdown Voltage: 30 to 60 V;(5)Collector-Base Breakdown Voltage: 30 to 100 V;(6)Emitter-Collector Breakdown Voltage: 5.0 to 10 V;(7)Collector-Emitter Dark Current: 1 to 100 nA. If you want to know more information about the 4N33M, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | 4N33M |
| Vendor | Fairchild Optoelectronics Group |
| Category | Isolators |
| Isolation Voltage | 5300Vrms |
| Input Type | DC |
| Output Type | Darlington with Base |
| Current - Output/Channel | 150mA |
| Voltage - Output | - |
| Vce Saturation (Max) | 1V |
| Current Transfer Ratio (Min) | 500% @ 10mA |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP |
| Packaging | Tube |
| Number of Circuits | 1 - Single |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 4N33M
4N33M
|
4N33M Data Sheet
