AAT8303, AAT8303ITST1, AAT8307 Selling Leads, Datasheet
MFG:ANALOGIC Package Cooled:SOP8 D/C:08+
AAT8303, AAT8303ITST1, AAT8307 Datasheet download
Part Number: AAT8303
MFG: ANALOGIC
Package Cooled: SOP8
D/C: 08+
AAT8303, AAT8303ITST1, AAT8307
- Table of contents:
Info of AAT8303
Info of AAT8303ITST1
Info of AAT8307
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About AAT8303
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Datasheet: AAT8303
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About AAT1015
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Datasheet: AAT1015
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About AAT8307
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Datasheet: AAT8307
File Size: 163536 KB
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AAT8303 General Description
The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.
AAT8303 Maximum Ratings
| Symbol | Description | Value | Units | |
| VDS |
Drain-Source Voltage | -20 | V | |
| VGS | Gate-Source Voltage | ±12 | ||
| ID | Continuous Drain Current @ TJ=150 1 | TA = 25 | ±10 | A |
| TA = 70 | ±8 | |||
| IDM | Pulsed Drain Current 2 | ±48 | ||
| IS | Continuous Source Current (Source-Drain Diode) 1 | -2.3 | ||
| PD | Maximum Power Dissipation 1 | TA = 25 | 2.3 | W |
| TA = 70 | 1.5 | |||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | ||
AAT8303 Features
• VDS(MAX) = -20V
• ID(MAX)
1 = -10A @ 25°C
• Low RDS(ON):
• 14 mΩ @ VGS = -4.5V
• 24 mΩ @ VGS = -2.5V
• ID(MAX)
1 = -10A @ 25°C
• Low RDS(ON):
• 14 mΩ @ VGS = -4.5V
• 24 mΩ @ VGS = -2.5V
AAT8303 Typical Application
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
AAT8303 Connection Diagram
AAT8307 General Description
The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.
AAT8307 Maximum Ratings
| Symbol | Description | Value | Units | |
| VDS |
Drain-Source Voltage | -20 | V | |
| VGS | Gate-Source Voltage | ±12 | ||
| ID | Continuous Drain Current @ TJ=150 1 | TA = 25 | ±6.0 | A |
| TA = 70 |
±4.8 | |||
| IDM | Pulsed Drain Current 2 | ±32 | ||
| IS | Continuous Source Current (Source-Drain Diode) 1 | -1.9 | ||
| PD | Maximum Power Dissipation 1 | TA = 25 | 2.1 | W |
| TA = 70 | 1.3 | |||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | ||
AAT8307 Features
• VDS(MAX) = -20V
• ID(MAX)
1 = -6.0A @ 25°C
• Low RDS(ON):
• 35 mΩ @ VGS = -4.5V
• 60 mΩ @ VGS = -2.5V
• ID(MAX)
1 = -6.0A @ 25°C
• Low RDS(ON):
• 35 mΩ @ VGS = -4.5V
• 60 mΩ @ VGS = -2.5V
AAT8307 Typical Application
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
AAT8307 Connection Diagram
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