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AGR09130EU, AGR09180EF, AGR1000

AGR09130EU, AGR09180EF, AGR1000 Selling Leads, Datasheet

MFG:RF  Package Cooled:N/A  D/C:TriQuint

AGR09130EU, AGR09180EF, AGR1000 Picture

AGR09130EU, AGR09180EF, AGR1000 Datasheet download

Five Points

Part Number: AGR09130EU

 

MFG: RF

Package Cooled: N/A

D/C: TriQuint

 

 

 
 
 
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About AGR09180EF

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Datasheet: AGR09180EF

File Size: 417103 KB

Manufacturer: TRIQUINT

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Datasheet: AGR09180EF

File Size: 417103 KB

Manufacturer: TRIQUINT

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Datasheet: AGR09180EF

File Size: 417103 KB

Manufacturer: TRIQUINT

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AGR09180EF General Description

The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.

AGR09180EF Maximum Ratings

Parameter Sym Value Unit
Drain-source Voltage VDSS 65 Vdc
Gate-source Voltage VGS 0.5, +15 Vdc
Total Dissipation at TC = 25 °C
Derate Above 25 C
PD
-
500
2.86
W
W/°C
Operating Junction Temperature TJ 200 °C
Storage Temperature Range TSTG 65, +150 °C

* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

AGR09180EF Features

Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8-13:
- Output power (POUT): 38 W.
- Power gain: 18.25 dB.
- Efficiency: 27%.
- Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: 45 dBc)
(1.98 MHz offset: 60 dBc).
- Input return loss: 10 dB.
High-reliability, gold-metalization process.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
180 W minimum output power.

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