AGR09130EU, AGR09180EF, AGR1000 Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:TriQuint
AGR09130EU, AGR09180EF, AGR1000 Datasheet download
Part Number: AGR09130EU
MFG: RF
Package Cooled: N/A
D/C: TriQuint
MFG:RF Package Cooled:N/A D/C:TriQuint
AGR09130EU, AGR09180EF, AGR1000 Datasheet download
MFG: RF
Package Cooled: N/A
D/C: TriQuint
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PDF/DataSheet Download
Datasheet: AGR09180EF
File Size: 417103 KB
Manufacturer: TRIQUINT
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AGR09180EF
File Size: 417103 KB
Manufacturer: TRIQUINT
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AGR09180EF
File Size: 417103 KB
Manufacturer: TRIQUINT
Download : Click here to Download
The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.
Parameter | Sym | Value | Unit |
Drain-source Voltage | VDSS | 65 | Vdc |
Gate-source Voltage | VGS | 0.5, +15 | Vdc |
Total Dissipation at TC = 25 °C Derate Above 25 C |
PD - |
500 2.86 |
W W/°C |
Operating Junction Temperature | TJ | 200 | °C |
Storage Temperature Range | TSTG | 65, +150 | °C |
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.