AGR09180EF

Continuous Drain Current :
Packaging :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : 15 V
Frequency : 865 MHz to 895 MHz
Output Power : 38 W
Gain : 18.25 dB
Package / Case : 9180EF


Features:

Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8-13:
- Output power (POUT): 38 W.
- Power gain: 18.25 dB.
- Efficiency: 27%.
- Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: 45 dBc)
(1.98 MHz offset: 60 dBc).
- Input return loss: 10 dB.
High-reliability, gold-metalization process.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
180 W minimum output power.


Specifications

* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

Description

The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This AGR09180EF is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.