APT1001R1AN, APT1001R2AN, APT1001R3AN Selling Leads, Datasheet
MFG:APT Package Cooled:06+ D/C:5430
APT1001R1AN, APT1001R2AN, APT1001R3AN Datasheet download
Part Number: APT1001R1AN
MFG: APT
Package Cooled: 06+
D/C: 5430
APT1001R1AN, APT1001R2AN, APT1001R3AN
- Table of contents:
Info of APT1001R1AN
Info of APT1001R2AN
Info of APT1001R3AN
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About APT1001R1AN
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Datasheet: APT1001R1AN
File Size: 214276 KB
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About APT1001R2AN
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Datasheet: APT1001R2AN
File Size: 61928 KB
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About APT1001
PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
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APT1001R1AN General Description
APT1001R1AN is a kind of N-channel enhancement mode high voltage power MOSFET.
What comes next is about the maximum ratings at TC=25.The VDSS (drain-source voltage) is 1000 V.The ID (continuous drain current @ TC=25) is 9.5 A.The IDM (pulsed drain current) is 38 A.The VGS (gate-source voltage continuous) is ±20 V.The PD (total power dissipation @ TC=25) is 230 W.The TJ,TSTG (operating and storage junction temperature range) is from -55 to 150.The TL (Max. Lead Temperature for Soldering Conditions:0.063" from case for 10 sec.) is 300.Then is about the thermal characteristics.The maximum RJC (junction to case) is 0.53/W.The maximum RJA (junction to ambient) is 30/W.
The following is about the static electrical characteristics.The minimum BVDSS (drain-source breakdown voltage) is 1000 V at VGS=0 V,ID=250A.The maximum IDSS (zero gate voltage drain current) is 250A at VDS=VDSS,VGS=0 V and is 1000A at VDS=0.8VDSS,VGS=0 V,TC=125.The maximum IGSS (gate-source leakage current) is ±100 nA at VGS=±30 V,VDS=0 V.The minimum VGS(TH) (gate threshold voltage) is 2 V and the maximum is 4 V at VDS=VGS,ID=1.0 mA.The minimum ID(ON) (on state drain current) is 9.5 A at VDS>ID(ON)*RDS(ON)Max,VGS=10 V.The maximum RDS(ON) (static drain-source on-state resistance) is 1.10 ohms at VGS=10 V,ID=0.5 ID [Cont.].
APT1001R1AN Maximum Ratings
APT1001R1AN Features
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