APT1001R1HN

APT1001R1HN is a kind of N-channel enhancement mode high voltage power MOSFET.

What comes next is about the maximum ratings APT1001R1HN at T_C=25.The V_DSS (drain-source voltage) is 1000 V.The I_D (continuous drain current @ T_C=25) is 9.5 A.The I_DM (pulsed drain current) is 38 A.The V_GS (gate-source voltage continuous) is ±30 V.The P_D (total power dissipation @ T_C=25) is 250 W.The T_J,T_STG (operating and storage junction temperature range) is from -55 to 150.The T_L (Lead Temperature:0.063" from case for 10 sec.) is 300.Then is about the thermal characteristics.The maximum R_JC (junction to case) is 0.50/W.The maximum R_JA (junction to ambient) is 40/W.

The following is about the static electrical characteristics APT1001R1HN.The minimum BV_DSS (drain-source breakdown voltage) is 1000 V at V_GS=0 V,I_D=250A.The maximum I_DSS (zero gate voltage drain current) is 250A at V_DS=V_DSS,V_GS=0 V and is 1000A at V_DS=0.8V_DSS,V_GS=0 V,T_C=125.The maximum I_GSS (gate-source leakage current) is ±100 nA at V_GS=±30 V,V_DS=0 V.The minimum V_GS(TH) (gate threshold voltage) is 2 V and the maximum is 4 V at V_DS=V_GS,ID=1.0 mA.The minimum I_D(ON) (on state drain current) is 9.5 A at V_DS>I_D(ON)*R_DS(ON)Max,VGS=10 V.The maximum R_DS(ON) (static drain-source on-state resistance) is 1.10 ohms at V_GS=10 V,I_D=0.5 I_D [Cont.].