MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:APT D/C:07+
APT10026JLL, APT10026JN, APT10026L2FLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: APT
D/C: 07+
Description: MOSFET N-CH 1000V 30A SOT-227
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PDF/DataSheet Download
Datasheet: APT10026JLL
File Size: 71437 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT10026JN
File Size: 65048 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT10026L2FLL
File Size: 67375 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Technical/Catalog Information | APT10026JLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 7114pF @ 25V |
| Power - Max | 595W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 267nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT10026JLL APT10026JLL |
| Symbol | Parameter | APT10026JLL | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
30 | Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 595 | Watts |
| Linear Derati | 4.76 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
30 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3200 |
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
| Symbol | Parameter | APT10026JN | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ TC = 25°C |
33 | Amps |
| IDM | Pulsed Drain Current | 132 | |
| VGS | Gate-Source Voltage | ±30 |
Volts |
| PD | Total Power Dissipation @ TC = 25°C | 690 | Watts |
| Linear Derating Factor | 5.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 |
| Symbol | Parameter | APT10026L2FLL | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
38 | Amps |
| IDM | Pulsed Drain Current |
152 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 890 | Watts |
| Linear Derati | 7.12 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
58 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3200 |
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
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