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Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT11058JFLL Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
1100
Volts
ID
Continuous Drain Current @ TC = 25°C
18
Amps
IDM
Pulsed Drain Current 1
72
VGS
Gate-Source Voltage
±30
Volts
VGSM
±40
PD
Total Power Dissipation @ TC=25
463
Watts
Linear Derating Factor
3.70
W/
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current 1 (Repetitive and Non-Repetitive)
18
Amps
EAR
Repetitive Avalanche Energy 1
50
mJ
EAS
Single Pulse Avalanche Energy 4
2500
APT11058JFLL Features
• Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package • FAST RECOVERY BODY