MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:TO-220 [K] D/C:08+/09+
APT1204R7KFLLG, APT12057B2LL, APT12057JFLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: TO-220 [K]
D/C: 08+/09+
Description: MOSFET N-CH 1200V 19A SOT-227
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PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT12057B2LL
File Size: 71868 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT12057JFLL
File Size: 173766 KB
Manufacturer: ADPOW
Download : Click here to Download
| Technical/Catalog Information | APT1204R7KFLLG |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 1.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 715pF @ 25V |
| Power - Max | 135W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT1204R7KFLLG APT1204R7KFLLG |
| Symbol | Parameter | APT12057 | UNIT |
| VDSS | Drain-Source Voltage | 1200 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
22 | Amps |
| IDM | Pulsed Drain Current |
88 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 690 | Watts |
| Linear Derati | 5.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
22 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3000 |
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
| Technical/Catalog Information | APT12057JFLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25° C | 19A |
| Rds On (Max) @ Id, Vgs | 570 mOhm @ 9.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 5155pF @ 25V |
| Power - Max | 520W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 185nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT12057JFLL APT12057JFLL |
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol |
Parameter |
APT12057JFLL |
Units |
| VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS |
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 |
1200 19 76 ±30 ±40 520 4.17 -55 to 150 300 19 50 3000 |
Volts Amps Volts Watts W/°C °C Amps mJ |
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