Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive Popular T-MAX(TM) or TO-264 Package
APT12067JFLL Parameters
Technical/Catalog Information
APT12067JFLL
Vendor
Microsemi-PPG
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C
17A
Rds On (Max) @ Id, Vgs
670 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds
4420pF @ 25V
Power - Max
463W
Packaging
Tube
Gate Charge (Qg) @ Vgs
150nC @ 10V
Package / Case
SOT-227
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
APT12067JFLL APT12067JFLL
APT12067JFLL General Description
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT12067JFLL Maximum Ratings
Symbol
Parameter
APT12067JFLL
Units
VDSS ID IDM VGS VGSM PD
TJ,TSTG TL IAR EAR EAS
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4