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Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
APT150GN120J Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage
1200
Volts
VGE
Gate-Emitter Voltage
± 30
Volts
IC
Continuous Collector Current @ TC = 25°C
215
Amps
IC
Continuous Collector Current @ TC = 110°C
99
Amps
ICM
Pulsed Collector Current 1
450
Amps
SSOA
Switching Safe Operating Area @ TJ = 150°C
150A @ 1200V
PD
Total Power Dissipation
625
Watts
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
°C
Tj Tstg
Operating and Storage Junction Temperature Range
-55 to 150
°C
APT150GN120J Features
• 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability
APT150GN120J Typical Application
Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS