MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:TO-220 [K] D/C:08+/09+
APT30GT60KRG, APT30M17JFLL, APT30M30B2FLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: TO-220 [K]
D/C: 08+/09+
Description: FREDFET N-CH 135A 300V SOT-227
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PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT30M17JFLL
File Size: 173784 KB
Manufacturer: ADPOW
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Technical/Catalog Information | APT30GT60KRG |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 64A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Power - Max | 250W |
| Mounting Type | Through Hole |
| Package / Case | TO-220 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT30GT60KRG APT30GT60KRG |
| Technical/Catalog Information | APT30M17JFLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 135A |
| Rds On (Max) @ Id, Vgs | 17 mOhm @ 67.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 14100pF @ 25V |
| Power - Max | 694W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 230nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT30M17JFLL APT30M17JFLL |
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter |
Rating |
Units |
| VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS |
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 |
300 135 540 ±30 ±40 694 5.56 -55 to 150 300 135 50 3600 |
Volts Amps Volts Watts W/°C °C Amps mJ |
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