MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:APT D/C:06+
APT30M30LLL, APT30M36B2LL, APT30M36JLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: APT
D/C: 06+
Description: MOSFET N-CH 76A 300V SOT-227
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PDF/DataSheet Download
Datasheet: APT30M30LLL
File Size: 72398 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT30M36B2LL
File Size: 71863 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT30M36JLL
File Size: 71428 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Symbol | Parameter | APT30M30LL | UNIT |
| VDSS | Drain-Source Voltage | 300 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
100 | Amps |
| IDM | Pulsed Drain Current |
400 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 690 | Watts |
| Linear Derati | 5.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
100 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3000 |
Lower Gate Charge
Lower Input Capacitance
Lower Gate Charge, Qg
Easier To Drive
100% Avalanche Tested
Popular SOT-227 Package
| Symbol | Parameter | APT30M36 | UNIT |
| VDSS | Drain-Source Voltage | 300 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 84 | Amps |
| IDM | Pulsed Drain Current | 336 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 568 | Watts |
| Linear Derating Factor | 4.55 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 84 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
| Technical/Catalog Information | APT30M36JLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 76A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 38A, 10V |
| Input Capacitance (Ciss) @ Vds | 6480pF @ 25V |
| Power - Max | 463W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 115nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT30M36JLL APT30M36JLL |
Power MOS 7 TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 TM by significantly lowering RDS(ON) and Qg. Power MOS 7 TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
|
Symbol |
Parameter |
APT30M36JLL |
UNIT |
|
VDSS |
Drain-Source Voltage |
300 |
Volts |
|
ID |
Continuous Drain Current @ TC= 25°C |
76 |
Amps |
|
IDM |
Pulsed Drain Current |
304 | |
|
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
|
VGSM |
Gate-Source Voltage Transient |
±40 | |
|
PD |
Total Power Dissipation @ Tc= 25°C |
463 |
Watts |
|
Linear Derating Factor |
3.70 |
W/°C | |
|
TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
|
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
|
IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
76 |
Amps |
|
EAR |
Repetitive Avalanche Energy |
50 |
mJ |
|
EAS |
Single Pulse Avalanche Energy |
2500 |
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