MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:ISOTOP?/FONT> D/C:08+/09+
APT30M60J, APT30M61BLL, APT30M61SLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: ISOTOP?/FONT>
D/C: 08+/09+
Description: MOSFET N-CH 600V 30A SOT-227
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PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT30M61BLL
File Size: 71487 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT30M61SLL
File Size: 58369 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Technical/Catalog Information | APT30M60J |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 21A, 10V |
| Input Capacitance (Ciss) @ Vds | 5890pF @ 25V |
| Power - Max | 356W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 215nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT30M60J APT30M60J |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter |
APT30M61 |
UNIT |
| VDSS | Drain-Source Voltage |
300 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
54 |
Amps |
| IDM | Pulsed Drain Current |
216 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
400 |
Watts |
| Linear Derating Factor |
3.20 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
54 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter |
APT30M61 |
UNIT |
| VDSS | Drain-Source Voltage |
300 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
54 |
Amps |
| IDM | Pulsed Drain Current |
216 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
400 |
Watts |
| Linear Derating Factor |
3.20 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
54 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
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