MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:ISOTOP?/FONT> D/C:08+/09+
APT35GP120JDQ2, APT37F50B, APT37F50S Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: ISOTOP?/FONT>
D/C: 08+/09+
Description: IGBT 1200V 64A SOT-227
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PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT37F50B
File Size: 271604 KB
Manufacturer: MICROSEMI
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT37F50S
File Size: 271604 KB
Manufacturer: MICROSEMI
Download : Click here to Download
| Technical/Catalog Information | APT35GP120JDQ2 |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 64A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 35A |
| Power - Max | 284W |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT35GP120JDQ2 APT35GP120JDQ2 APT35GP120JDQ2MI ND APT35GP120JDQ2MIND APT35GP120JDQ2MI |
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
| Symbol | Parameter |
Ratings |
Units |
| ID IDM VGS EAS IAR |
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive |
37 24 115 ±30 780 18 |
A V mJ A |
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