MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:APT D/C:06+
APT5010JFLL, APT5010JLC, APT5010JLL Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: APT
D/C: 06+
Description: MOSFET N-CH 500V 41A SOT-227
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PDF/DataSheet Download
Datasheet: APT5010JFLL
File Size: 64907 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT5010JLC
File Size: 44327 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT5010JLL
File Size: 53428 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Technical/Catalog Information | APT5010JFLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 41A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 20.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 4360pF @ 25V |
| Power - Max | 378W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT5010JFLL APT5010JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT5010JFLL | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 44 | Amps |
| IDM | Pulsed Drain Current |
176 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 440 | Watts |
| Linear Derating Factor | 3.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitve and Non-Repetitive) |
44 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 1800 |
| Symbol | Parameter | APT5010JLC | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 44 | Amps |
| IDM | Pulsed Drain Current | 176 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 450 | Watts |
| Linear Derating Factor | 3.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 44 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
| Technical/Catalog Information | APT5010JLL |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 41A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 20.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 4360pF @ 25V |
| Power - Max | 378W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 95nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT5010JLL APT5010JLL |
| Symbol | Parameter | APT5010JLC | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 44 | Amps |
| IDM | Pulsed Drain Current | 176 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 440 | Watts |
| Linear Derating Factor | 3.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 44 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 1800 |
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